ASTM F980M-1996(2003) 测量硅半导体器件中中子感应位移故障的快速退火用标准指南(米制单位)

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【英文标准名称】:StandardGuideforMeasurementofRapidAnnealingofNeutron-InducedDisplacementDamageinSiliconSemiconductorDevices[Metric]
【原文标准名称】:测量硅半导体器件中中子感应位移故障的快速退火用标准指南(米制单位)
【标准号】:ASTMF980M-1996(2003)
【标准状态】:现行
【国别】:
【发布日期】:1996
【实施或试行日期】:
【发布单位】:美国材料与试验协会(US-ASTM)
【起草单位】:F01.11
【标准类型】:(Guide)
【标准水平】:()
【中文主题词】:破坏试验;中子;缺陷与故障;集成电路;辐射;导则;放射性照射;电子硬度;硬度试验;短的;辐射源;位移故障;半导体器件中感应位移故障;中子射线;脉冲中子;快速退火效果;弱点;退火;器件;电子探测器
【英文主题词】:annealingfactor;displacementdamage;integratedcircuits;neutrondamage;neutrondegradation;rapidannealing;semiconductordevices
【摘要】:Electroniccircuitsusedinmanyspace,military,andnuclearpowersystemsmaybeexposedtovariouslevelsandtimeprofilesofneutronradiation.Itisessentialforthedesignandfabricationofsuchcircuitsthattestmethodsbeavailablethatcandeterminethevulnerabilityorhardness(measureofnonvulnerability)ofcomponentstobeusedinthem.Adeterminationofhardnessisoftennecessaryfortheshortterm(x2248;100x03BC;s)aswellaslongterm(permanentdamage)followingexposure.1.1Thisguidedefinestherequirementsandproceduresfortestingsilicondiscretesemiconductordevicesandintegratedcircuitsforrapid-annealingeffectsfromdisplacementdamageresultingfromneutronradiation.Thistestwillproducedegradationoftheelectricalpropertiesoftheirradiateddevicesandshouldbeconsideredadestructivetest.Rapidannealingofdisplacementdamageisusuallyassociatedwithbipolartechnologies.1.2Thisstandarddoesnotpurporttoaddressallofthesafetyconcerns,ifany,associatedwithitsuse.Itistheresponsibilityoftheuserofthisstandardtoconsultandestablishappropriatesafetyandhealthpracticesanddeterminetheapplicabilityofregulatorylimitationspriortouse.
【中国标准分类号】:L40
【国际标准分类号】:
【页数】:5P.;A4
【正文语种】: